Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 82mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 107 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2.37 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.1W (Ta), 200W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
NVMFS5C628NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
In Stock: 0 $1.64000 |
 |
IAUC100N04S6N015ATMA1IR (Infineon Technologies) |
IAUC100N04S6N015ATMA1 |
In Stock: 5,000 $1.56000 |
 |
IAUC100N04S6L014ATMA1IR (Infineon Technologies) |
IAUC100N04S6L014ATMA1 |
In Stock: 0 $1.56000 |
 |
IPB65R420CFDATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A D2PAK |
In Stock: 0 $0.74663 |
|
SPP80N03S2L05Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 0 $0.74663 |
 |
FDN86501LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.6A SUPERSOT3 |
In Stock: 0 $1.60000 |
 |
FCU7N60TURochester Electronics |
MOSFET N-CH 600V 7A IPAK |
In Stock: 0 $0.75000 |
 |
HUF75339G3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 0 $0.75000 |
 |
STD85N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 70A DPAK |
In Stock: 0 $1.56000 |
 |
NTMFS6D1N08HT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 17A/89A 5DFN |
In Stock: 0 $1.67000 |
