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| Type | Description |
|---|---|
| Series: | DTMOSIV |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 170µA |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 380 pF @ 300 V |
| FET Feature: | - |
| Power Dissipation (Max): | 30W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220SIS |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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AOT8N80LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 800V 7.4A TO220 |
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IPA60R600P6XKSA1IR (Infineon Technologies) |
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RCX300N20ROHM Semiconductor |
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IRF634PBFVishay / Siliconix |
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IRF840STRRPBFVishay / Siliconix |
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DMN90H2D2HCTIZetex Semiconductors (Diodes Inc.) |
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