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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 95 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2840 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 140W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IPP086N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220-3 |
In Stock: 0 $1.87000 |
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SQP60N06-15_GE3Vishay / Siliconix |
MOSFET N-CH 60V 56A TO220AB |
In Stock: 0 $1.87000 |
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IRFB7537PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 173A TO220AB |
In Stock: 0 $1.91000 |
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FDP3652Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A/61A TO220-3 |
In Stock: 0 $1.93000 |
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STD11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
In Stock: 8 $3.22000 |
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TK40A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 40A TO220SIS |
In Stock: 0 $1.94000 |
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IRF8010PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220AB |
In Stock: 5 $1.97000 |
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TK6A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 6A TO220SIS |
In Stock: 19 $1.98000 |
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TK290A65Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 11.5A TO220SIS |
In Stock: 100 $2.05000 |
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IPA60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO220-FP |
In Stock: 16 $2.05000 |
