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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 550mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 50W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F |
| Package / Case: | TO-220-3 Full Pack |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IRF2807PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 82A TO220AB |
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MOSFET P-CH 400V 1.8A TO251AA |
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MOSFET P-CH 60V 18A TO220AB |
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IRFBG20PBFVishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
In Stock: 0 $1.66000 |
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IRFR9220PBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
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FDB5800Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 14A/80A D2PAK |
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IRFS4227TRLPBFIR (Infineon Technologies) |
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2SK3564(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 3A TO220SIS |
In Stock: 0 $1.70000 |
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TK7A60W5,S5VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7A TO220SIS |
In Stock: 24 $1.71000 |
