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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 9mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4820 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 230W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-262 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|---|---|---|---|
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SUM90220E-GE3Vishay / Siliconix |
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SUM40012EL-GE3Vishay / Siliconix |
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STB7ANM60NSTMicroelectronics |
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STL12N65M5STMicroelectronics |
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In Stock: 0 $2.86000 |
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IXTP4N70X2MWickmann / Littelfuse |
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In Stock: 7,100 $2.86000 |
