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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bag |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25 V |
| Current - Continuous Drain (Id) @ 25°C: | 10A |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 600Ohm @ 0A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 10A |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5 pF @ 10 V |
| FET Feature: | Standard |
| Power Dissipation (Max): | 800mW (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-72 |
| Package / Case: | TO-72-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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MOSFET N-CH 650V 65A TO247 |
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MSC080SMA120SRoving Networks / Microchip Technology |
SICFET N-CH 1200V 35A D3PAK |
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IXFR36N60PWickmann / Littelfuse |
MOSFET N-CH 600V 20A ISOPLUS247 |
In Stock: 60 $11.79000 |
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TK040Z65Z,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 57A TO247-4L |
In Stock: 100 $11.83000 |
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TK31Z60X,S1FToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
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MOSFET N-CH 250V 100A TO268 |
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TK49N65W,S1FToshiba Electronic Devices and Storage Corporation |
PB-F POWER MOSFET TRANSISTOR TO2 |
In Stock: 86 $11.99000 |
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NTE2376NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 30A TO247 |
In Stock: 95 $12.02000 |
