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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500 V |
| Current - Continuous Drain (Id) @ 25°C: | 9.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 520mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 38.4 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1000 pF @ 30 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta), 37W (Tc) |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F-3FS |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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MOSFET N-CH 950V 4A IPAK |
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IPA65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7A TO220-FP |
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IXTA1R6N50D2Wickmann / Littelfuse |
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SIHP12N60E-BE3Vishay / Siliconix |
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STP20N65M5STMicroelectronics |
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