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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Rds On (Max) @ Id, Vgs: | 77mOhm @ 17A, 5V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 64 nC @ 5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.7W (Ta), 150W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|---|---|---|---|
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TK10A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO220SIS |
In Stock: 65 $2.53000 |
