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| Type | Description |
|---|---|
| Series: | SuperMESH™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3.3Ohm @ 1.15A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IRF610PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 3.3A TO220AB |
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VP0104N3-GRoving Networks / Microchip Technology |
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TN0606N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 500MA TO92-3 |
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VP0106N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 250MA TO92-3 |
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NTD4858N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A IPAK |
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TP0606N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
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CSD16340Q3TTexas Instruments |
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DMT6009LCTZetex Semiconductors (Diodes Inc.) |
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In Stock: 734 $0.91000 |
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VN2410L-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
In Stock: 622 $0.91000 |
