Type | Description |
---|---|
Series: | CoolMOS™ G7 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: | 68 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2670 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 278W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-HDSOP-10-1 |
Package / Case: | 10-PowerSOP Module |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
IMBF170R450M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 9.8A TO263-7 |
In Stock: 673 $10.47000 |
![]() |
IMBG120R220M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 13A TO263 |
In Stock: 968 $10.51000 |
![]() |
UF3C065040B3UnitedSiC |
MOSFET N-CH 650V 41A TO263 |
In Stock: 603 $12.24000 |
![]() |
UF3C120080B7SUnitedSiC |
SICFET P-CH 1200V 28.8A D2PAK-7 |
In Stock: 720 $12.27000 |
![]() |
IMBG120R140M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 18A TO263 |
In Stock: 932 $12.09000 |
![]() |
IPB65R045C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 46A TO263-3 |
In Stock: 320 $12.16000 |
![]() |
UF3SC065040D8SUnitedSiC |
SICFET N-CH 650V 18A 4DFN |
In Stock: 2,464 $12.70000 |
![]() |
UF3SC065040B7SUnitedSiC |
650V/40MOHM, SIC, STACKED FAST C |
In Stock: 789 $12.70000 |
![]() |
IPB60R040C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 50A TO263-3 |
In Stock: 774 $12.81000 |
![]() |
IPT60R035CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 67A 8HSOF |
In Stock: 1,961 $12.91000 |