Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | SD210DE |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 50mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 25V |
| Rds On (Max) @ Id, Vgs: | 45Ohm @ 1mA, 10V |
| Vgs(th) (Max) @ Id: | 1.5V @ 1µA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±40V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 300mW (Ta) |
| Operating Temperature: | -55°C ~ 125°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-72-4 |
| Package / Case: | TO-206AF, TO-72-4 Metal Can |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
IPB017N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
In Stock: 852 $6.21000 |
 |
IPL60R075CFD7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A 4VSON |
In Stock: 2,990 $6.22000 |
 |
IPL65R099C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A 4VSON |
In Stock: 1,794 $6.26000 |
 |
IPB65R110CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A D2PAK |
In Stock: 1,024 $6.30000 |
 |
BTS129NKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
In Stock: 4,500 $6.36000 |
 |
IPB60R125CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 25A TO263-3 |
In Stock: 404 $6.46000 |
 |
IPB60R070CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO263-3-2 |
In Stock: 860 $6.53000 |
 |
IPB60R099C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A D2PAK |
In Stock: 840 $6.57000 |
 |
3N163 TO-72 4LLinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
In Stock: 3,384 $6.81000 |
 |
UJ3C065080B3UnitedSiC |
MOSFET N-CH 650V 25A TO263 |
In Stock: 686 $7.07000 |
