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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 8mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 5 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 2.88 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 130W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-262 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|---|---|---|---|
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MOSFET N-CH 650V 10A TO252-3 |
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IPI120N04S401AKSA1Rochester Electronics |
MOSFET N-CH 40V 120A TO262-3 |
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AUIRFS8403Rochester Electronics |
MOSFET N-CH 40V 123A D2PAK |
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