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| Type | Description |
|---|---|
| Series: | C3M™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 157mOhm @ 6.76A, 15V |
| Vgs(th) (Max) @ Id: | 3.6V @ 1.86mA |
| Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 15 V |
| Vgs (Max): | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 640 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 98W (Tc) |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
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|---|---|---|---|
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In Stock: 649 $4.60000 |
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FDB3632-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A TO263AB |
In Stock: 64,728,000 $4.61000 |
