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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 2.2mOhm @ 31A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs: | 16 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1780 pF @ 30 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MTY30N50ERochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 8,192 $5.08000 |
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SIHP17N80E-BE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO220AB |
In Stock: 1,000 $5.08000 |
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RJK60S7DPP-E0#T2Rochester Electronics |
N-CHANNEL MOSFET |
In Stock: 48,184 $5.12000 |
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RJK6014DPP-E0#T2Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
In Stock: 5,107 $5.12000 |
|
SIHG125N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO247AC |
In Stock: 550 $5.14000 |
 |
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
In Stock: 435 $5.15000 |
 |
FQA15N70Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 379 $5.17000 |
 |
AOT095A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 38A TO220 |
In Stock: 992 $5.19000 |
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AOTF095A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 38A TO220F |
In Stock: 698 $5.19000 |
 |
STW7N95K3STMicroelectronics |
MOSFET N-CH 950V 7.2A TO247-3 |
In Stock: 596 $5.19000 |
