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| Type | Description |
|---|---|
| Series: | MDmesh™ V |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 95mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 71 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 190W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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EPC2023EPC |
GANFET N-CH 30V 60A DIE |
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IRFP244PBFVishay / Siliconix |
MOSFET N-CH 250V 15A TO247-3 |
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NTP082N65S3HFSanyo Semiconductor/ON Semiconductor |
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SIHG21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 17.4A TO247AC |
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SIHW21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 17.4A TO247AD |
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TK090A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 30A TO220SIS |
In Stock: 300 $5.01000 |
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STP25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220 |
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