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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | - |
| Technology: | - |
| Drain to Source Voltage (Vdss): | - |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Supplier Device Package: | - |
| Package / Case: | - |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
FS50VS-3-T11Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 24,000 $3.06000 |
 |
2SK1165-ERochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 327 $3.06000 |
 |
FQAF11N90Rochester Electronics |
MOSFET N-CH 900V 7.2A TO3PF |
In Stock: 1,387 $3.07000 |
 |
R6009JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
In Stock: 1,933 $3.08000 |
|
UPA1560H(3)-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
In Stock: 56,180 $3.09000 |
 |
H5N2007LSTL-ERochester Electronics |
25A, 200V, 0.047OHM, N CHANNEL M |
In Stock: 23,000 $3.09000 |
|
2SK3511-S19-AYRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
In Stock: 16,000 $3.10000 |
|
SIHB186N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 8.4A D2PAK |
In Stock: 3,050 $3.10000 |
 |
BTS282ZE3180ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 84,000 $3.11000 |
|
H5N2307LSTL-ERochester Electronics |
30A, 230V, 0.052OHM, N CHANNEL M |
In Stock: 21,000 $3.12000 |
