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| Type | Description |
|---|---|
| Series: | TrenchMOS™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 86 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6.776 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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SIJ128LDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK |
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SI4840BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 19A 8SO |
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FDC633NRochester Electronics |
MOSFET N-CH 30V 5.2A SUPERSOT6 |
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FQPF9N50CTRochester Electronics |
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