Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 111 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5.512 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 263W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
HUF75333S3Rochester Electronics |
MOSFET N-CH 55V 66A I2PAK |
In Stock: 1,488 $0.57000 |
 |
IRFR825PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
In Stock: 1,304 $0.57000 |
 |
SISS42LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.3A/39A PPAK |
In Stock: 11,239 $1.36000 |
 |
STL45N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 18A POWERFLAT |
In Stock: 3,000 $1.20000 |
 |
FDB8880-ONRochester Electronics |
11A, 30V, 0.0145OHM, N-CHANNEL, |
In Stock: 10,400 $0.58000 |
 |
FDB8880Rochester Electronics |
11A, 30V, 0.0145OHM, N-CHANNEL, |
In Stock: 3,991 $0.58000 |
 |
PSMN013-100ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
In Stock: 3,989 $0.58000 |
 |
SQJA66EP-T1_GE3Vishay / Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S) |
In Stock: 3,025 $1.37000 |
 |
TQM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFNU |
In Stock: 5,000 $1.38000 |
 |
TQM250NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 7A/32A 8PDFNU |
In Stock: 5,000 $1.38000 |
