Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | FASTIRFET™, HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 16.4mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id: | 3.6V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 733 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.6W (Ta), 39W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-PQFN (5x6) |
| Package / Case: | 8-PowerTDFN |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
FQPF10N20Rochester Electronics |
MOSFET N-CH 200V 6.8A TO220F |
In Stock: 1,616 $0.41000 |
 |
FQPF3N40Rochester Electronics |
MOSFET N-CH 400V 1.6A TO220F |
In Stock: 1,544 $0.41000 |
 |
NVTFS5824NLTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
In Stock: 1,500 $0.41000 |
 |
NTD6600N-1GRochester Electronics |
MOSFET N-CH 100V 12A IPAK |
In Stock: 1,425 $0.41000 |
 |
IRFR221Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 1,075 $0.41000 |
 |
IPI80N04S3-06Rochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 1,050 $0.41000 |
 |
IRFR210TRLPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
In Stock: 3,000 $0.97000 |
 |
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
In Stock: 2,000 $0.97000 |
 |
TK25S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 25A DPAK |
In Stock: 3,652 $0.98000 |
 |
TJ20S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 20A DPAK |
In Stock: 7,845 $0.98000 |
