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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 75 V |
| Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 11.2mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id: | 3.7V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 89 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3.107 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 99W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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19A, 100V, 0.074OHM, N-CHANNEL, |
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HUFA75321D3STRochester Electronics |
N-CHANNEL ULTRAFET 55V, 20A, 36 |
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MOSFET N-CH 25V 100A LFPAK56 |
In Stock: 3,133 $0.38000 |
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TPH2R003PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100A 8SOP |
In Stock: 5,893 $0.99000 |
