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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 62mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 960 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-WDFN (2x2) |
| Package / Case: | 6-WDFN Exposed Pad |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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2SJ210(0)-T1B-ATRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
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In Stock: 13,500 $0.30000 |
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12A, 60V, 0.104OHM, N-CHANNEL, |
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In Stock: 6,970 $0.30000 |
