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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4.4Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-251AA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IRFU9214PBFVishay / Siliconix |
MOSFET P-CH 250V 2.7A TO251AA |
In Stock: 2,886 $1.62000 |
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IRFU224PBFVishay / Siliconix |
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In Stock: 2,893 $1.63000 |
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IRFU1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A TO251AA |
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STP2NK90ZSTMicroelectronics |
MOSFET N-CH 900V 2.1A TO220AB |
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SIHU2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A IPAK |
In Stock: 3,037 $1.65000 |
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In Stock: 1,785 $1.66000 |
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TSM60NB600CF C0GTSC (Taiwan Semiconductor) |
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SIHD6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A DPAK |
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STD2NK90Z-1STMicroelectronics |
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In Stock: 3,000 $1.70000 |
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IRFR9020PBFVishay / Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
In Stock: 2,127 $1.70000 |
