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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.3Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14.5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 640 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 104W (Tc) |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-251-3 |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SIHU5N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO251 |
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SIHD5N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO252AA |
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STU2N80K5STMicroelectronics |
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FDB12N50FTM-WSSanyo Semiconductor/ON Semiconductor |
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In Stock: 21,481,600 $1.87000 |
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FQU9N25TUSanyo Semiconductor/ON Semiconductor |
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TSM4ND65CITSC (Taiwan Semiconductor) |
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IPL60R365P7AUMA1IR (Infineon Technologies) |
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STU9N60M2STMicroelectronics |
MOSFET N-CH 600V 5.5A IPAK |
In Stock: 2,990 $1.21000 |
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SIHD1K4N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 4.2A TO252AA |
In Stock: 2,963 $1.22000 |
