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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 930mOhm @ 5.1A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1417 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 167W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IRLIZ44GPBFVishay / Siliconix |
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IRFIBC30GPBFVishay / Siliconix |
MOSFET N-CH 600V 2.5A TO220-3 |
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SUP10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63A TO220AB |
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STP140NF75STMicroelectronics |
MOSFET N-CH 75V 120A TO220AB |
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IPA80R280P7XKSA1IR (Infineon Technologies) |
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IRF840LCLPBFVishay / Siliconix |
MOSFET N-CH 500V 8A I2PAK |
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