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| Type | Description |
|---|---|
| Series: | C3M™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 900 V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 155mOhm @ 15A, 15V |
| Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 17.3 nC @ 15 V |
| Vgs (Max): | +18V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 600 V |
| FET Feature: | - |
| Power Dissipation (Max): | 83W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK-7 |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|---|---|---|---|
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STW11NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 8.3A TO247-3 |
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