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| Type | Description |
|---|---|
| Series: | MDmesh™ M2 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 500mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16.5 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 535 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 85W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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MOSFET N-CH 20V 13.5A PPAK1212-8 |
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MOSFET N-CH 60V 6A 8SO |
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MOSFET N-CH 40V 62.5A/100A PPAK |
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MOSFET N-CH 60V 600MA TO92-3 |
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TPH8R80ANH,L1QToshiba Electronic Devices and Storage Corporation |
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AOI21357Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 23A/70A TO251A |
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SQD45P03-12_GE3Vishay / Siliconix |
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STB4NK60ZT4STMicroelectronics |
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In Stock: 2,329 $1.62000 |
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FDD10AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A/50A TO252AA |
In Stock: 912 $1.70000 |
