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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 2.4mOhm @ 30A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 5 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IPB107N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |
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IXTA3N120-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 3A TO263 |
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STB11NM80T4STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
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IRFP22N50APBFVishay / Siliconix |
MOSFET N-CH 500V 22A TO247-3 |
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IPT111N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 96A 8HSOF |
In Stock: 7,017 $7.99000 |
