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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 110mOhm @ 500mA, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.45 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 52 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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BSC077N12NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 13.4/98A 8TDSON |
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TPWR6003PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 150A 8DSOP |
In Stock: 16,059 $2.92000 |
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IPB039N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 160A TO263-7 |
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BSC040N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TDSON |
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NDB6060LSanyo Semiconductor/ON Semiconductor |
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In Stock: 3,476 $2.60000 |
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FQP27P06Sanyo Semiconductor/ON Semiconductor |
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AON6290Alpha and Omega Semiconductor, Inc. |
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IRFD9020PBFVishay / Siliconix |
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SI7884BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
In Stock: 5,249 $3.06000 |
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IPD65R190C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO252-3 |
In Stock: 8,610 $3.06000 |
