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| Type | Description |
|---|---|
| Series: | NexFET™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 58 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5070 pF @ 30 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.2W (Ta), 156W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-VSONP (5x6) |
| Package / Case: | 8-PowerTDFN |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SI7450DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |
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SI7450DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |
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SIR882DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR882ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
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MOSFET N-CH 100V 60A PPAK SO-8 |
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STD100N10F7STMicroelectronics |
MOSFET N CH 100V 80A DPAK |
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IRLD024PBFVishay / Siliconix |
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IPD068N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
In Stock: 11,069 $2.38000 |
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TPW4R50ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 92A 8DSOP |
In Stock: 27,892 $2.66000 |
