Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 160mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.48 nC @ 5 V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 55 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
IRFH5006TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 21A/100A 8PQFN |
In Stock: 6,057 $1.83000 |
![]() |
CSD16325Q5Texas Instruments |
MOSFET N-CH 25V 33A/100A 8VSON |
In Stock: 8,501 $2.06000 |
![]() |
SPD06N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
In Stock: 7,340 $1.85000 |
![]() |
IPD60R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
In Stock: 32,447 $1.86000 |
![]() |
IRF1010EZSTRLPIR (Infineon Technologies) |
MOSFET N-CH 60V 75A D2PAK |
In Stock: 8,740 $1.66000 |
![]() |
FDMC86570LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/56A POWER33 |
In Stock: 3,397 $2.08000 |
![]() |
FDMS86500LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 25A/80A 8PQFN |
In Stock: 1,813 $2.08000 |
![]() |
IRFZ44ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
In Stock: 18,038 $1.68000 |
![]() |
AON6240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 27A/85A 8DFN |
In Stock: 3,994 $2.10000 |
![]() |
SIR662DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
In Stock: 1,838 $2.10000 |