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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 56 nC @ 5 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3480 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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|---|---|---|---|
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SI7315DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |
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SIRC16DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
In Stock: 4,740 $1.32000 |
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SI7463ADP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8 |
In Stock: 5,022 $1.32000 |
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ZXMN10A25GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.9A SOT223 |
In Stock: 11,739 $1.25000 |
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BSC076N06NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TDSON-8 |
In Stock: 40,397 $1.30000 |
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ZXMN6A09GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.4A SOT223 |
In Stock: 22,065 $1.25000 |
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IRFR15N20DTRPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 17A DPAK |
In Stock: 9,430 $1.24000 |
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FDD8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/160A TO252AA |
In Stock: 5,135 $1.35000 |
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BSP149H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
In Stock: 17,931 $1.24000 |
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SISS30LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 16A/55.5A PPAK |
In Stock: 46,776 $1.36000 |
