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TPT5609-C-AP

TPT5609-C-AP

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Manufacturer Part
TPT5609-C-AP
Manufacturer
Micro Commercial Components (MCC)
Description
DIODE
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single
Series
-
InStock
3428
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Box (TB)
Part Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:750 mW
Frequency - Transition:190MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:TO-92

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