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MJE802G

MJE802G

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Manufacturer Part
MJE802G
Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 80V 4A TO225AA
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single
Series
-
InStock
4886
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-225AA

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