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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io) (per Diode): | 300A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 100 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 90 ns |
| Current - Reverse Leakage @ Vr: | 25 µA @ 50 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Twin Tower |
| Supplier Device Package: | Twin Tower |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MUR30040CTGeneSiC Semiconductor |
DIODE MODULE 400V 300A 2TOWER |
In Stock: 0 $87.80440 |
|
MUR30060CTGeneSiC Semiconductor |
DIODE MODULE 600V 300A 2TOWER |
In Stock: 0 $87.80440 |
|
MUR30060CTRGeneSiC Semiconductor |
DIODE MODULE 600V 300A 2TOWER |
In Stock: 0 $87.80440 |
 |
MBRT40045DLGeneSiC Semiconductor |
DIODE SCHOTT 45V 200A 3TOWER |
In Stock: 0 $88.15880 |
 |
MBR40035CTRGeneSiC Semiconductor |
DIODE MODULE 35V 400A 2TOWER |
In Stock: 1 $88.16000 |
 |
MSRTA200100(A)DGeneSiC Semiconductor |
DIODE GEN 1KV 200A 3 TOWER |
In Stock: 0 $88.40889 |
 |
MSRTA200120(A)DGeneSiC Semiconductor |
DIODE GEN 1.2KV 200A 3 TOWER |
In Stock: 0 $88.40889 |
 |
MSRTA200140(A)DGeneSiC Semiconductor |
DIODE GEN 1.4KV 200A 3 TOWER |
In Stock: 0 $88.40889 |
 |
MSRTA200160(A)DGeneSiC Semiconductor |
DIODE GEN 1.6KV 200A 3 TOWER |
In Stock: 0 $88.40889 |
 |
MSRTA20060(A)DGeneSiC Semiconductor |
DIODE GEN PURP 600V 200A 3 TOWER |
In Stock: 0 $88.40889 |
