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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io) (per Diode): | 200A |
| Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 200 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 3 mA @ 200 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Twin Tower |
| Supplier Device Package: | Twin Tower |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MBRT300150GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 150A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MBRT300150RGeneSiC Semiconductor |
DIODE SCHOTTKY 150V 150A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MBRT300200GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 150A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MBRT300200RGeneSiC Semiconductor |
DIODE SCHOTTKY 200V 150A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT200100(A)DGeneSiC Semiconductor |
DIODE GEN 1KV 200A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT200120(A)DGeneSiC Semiconductor |
DIODE GEN 1.2KV 200A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT200140(A)DGeneSiC Semiconductor |
DIODE GEN 1.4KV 200A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT200160(A)DGeneSiC Semiconductor |
DIODE GEN 1.6KV 200A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT20060(A)DGeneSiC Semiconductor |
DIODE GEN PURP 600V 200A 3 TOWER |
In Stock: 0 $81.33480 |
 |
MSRT20080(A)DGeneSiC Semiconductor |
DIODE GEN PURP 800V 200A 3 TOWER |
In Stock: 0 $81.33480 |
