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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io) (per Diode): | 60A |
| Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 60 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 1 mA @ 200 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Three Tower |
| Supplier Device Package: | Three Tower |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MBRT120200RGeneSiC Semiconductor |
DIODE SCHOTTKY 200V 60A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT100100(A)DGeneSiC Semiconductor |
DIODE GEN 1KV 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT100120(A)DGeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT100140(A)DGeneSiC Semiconductor |
DIODE GEN 1.4KV 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT100160(A)DGeneSiC Semiconductor |
DIODE GEN 1.6KV 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT10060(A)DGeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT10080(A)DGeneSiC Semiconductor |
DIODE GEN PURP 800V 100A 3 TOWER |
In Stock: 0 $55.60080 |
 |
MSRT250100(A)GeneSiC Semiconductor |
DIODE MODULE 1KV 250A 3TOWER |
In Stock: 0 $55.80880 |
 |
MSRT250120(A)GeneSiC Semiconductor |
DIODE MODULE 1.2KV 250A 3TOWER |
In Stock: 0 $55.80880 |
 |
MSRT250140(A)GeneSiC Semiconductor |
DIODE MODULE 1.4KV 250A 3TOWER |
In Stock: 0 $55.80880 |
