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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Three Phase |
| Technology: | Silicon Carbide Schottky |
| Voltage - Peak Reverse (Max): | 1.2 kV |
| Current - Average Rectified (Io): | - |
| Voltage - Forward (Vf) (Max) @ If: | - |
| Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | SP1F |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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NTE5745NTE Electronics, Inc. |
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MSC50DC170HJRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SOT227 |
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MSCDC50H1701AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP1F |
In Stock: 15 $184.82000 |
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MSCDC100H70AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP6C |
In Stock: 12 $238.19000 |
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MSCDC50X1701AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP1F |
In Stock: 6 $261.72000 |
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MSCDC100H120AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP6C |
In Stock: 7 $297.49000 |
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MSCDC200H70AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP6C |
In Stock: 9 $348.78000 |
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MSCDC100H170AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP6C |
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MSCDC200H170AGRoving Networks / Microchip Technology |
PM-DIODE-SIC-SBD-SP6C |
In Stock: 5 $890.02000 |
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DBL107G C1GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 1KV 1A DBL |
In Stock: 200 $0.16261 |
