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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) Common Source |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 120V |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A |
| Rds On (Max) @ Id, Vgs: | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
PSMN070-200BRochester Electronics |
35A, 200V, 0.07OHM, N-CHANNEL |
In Stock: 0 $1.09000 |
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FDS6982SRochester Electronics |
N-CHANNEL POWER MOSFET |
In Stock: 0 $1.14000 |
 |
PSMN4R8-100BSE,118Rochester Electronics |
N CHANNEL 100V 4.8 MOHM STANDAR |
In Stock: 0 $1.19000 |
 |
2SK2415-AZRochester Electronics |
SWITCHING N-CHANNEL POWER MOSFET |
In Stock: 0 $1.23000 |
 |
PSMN5R0-100ES127Rochester Electronics |
120A, 100V, 0.005OHM, N CHANNE |
In Stock: 0 $1.29000 |
 |
PSMN2R0-60ESRochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
In Stock: 0 $1.29000 |
 |
PSMN5R0-100ESRochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
In Stock: 0 $1.29000 |
 |
IRFH4251DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
In Stock: 0 $1.35000 |
 |
BSG0810NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/39A 8TISON |
In Stock: 0 $2.66000 |
 |
IRFP250S2453Rochester Electronics |
33A, 200V, 0.085 OHM, N-CHANNEL |
In Stock: 0 $1.48000 |
