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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A |
| Rds On (Max) @ Id, Vgs: | 50mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
| Power - Max: | 2W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
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