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| Type | Description |
|---|---|
| Series: | HiPerFET™, TrenchT2™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) Asymmetrical |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 75V |
| Current - Continuous Drain (Id) @ 25°C: | 120A |
| Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
| Power - Max: | 170W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | ISOPLUSi5-Pak™ |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
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