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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 134A (Tc) |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 4V @ 22mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 14000pF @ 10V |
| Power - Max: | 935W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
BSM180D12P2E002ROHM Semiconductor |
1200V, 204A, HALF BRIDGE, SILICO |
In Stock: 8 $676.50000 |
|
BSM400D12P3G002ROHM Semiconductor |
1200V, 358A, HALF BRIDGE, FULL S |
In Stock: 0 $1245.00000 |
|
BSM300D12P3E005ROHM Semiconductor |
SILICON CARBIDE POWER MODULE. B |
In Stock: 9 $1371.43000 |
|
BSM600D12P3G001ROHM Semiconductor |
1200V, 576A, HALF BRIDGE, FULL S |
In Stock: 5 $1785.00000 |
|
BSM400D12P2G003ROHM Semiconductor |
SILICON CARBIDE POWER MODULE. B |
In Stock: 4 $2142.86000 |
 |
NTHD5903T1Rochester Electronics |
P-CHANNEL MOSFET |
In Stock: 835 $0.14000 |
 |
2SK3614-TD-ERochester Electronics |
N-CHANNEL, MOSFET |
In Stock: 1,000 $0.19000 |
 |
IRF7309PBFRochester Electronics |
P-CHANNEL POWER MOSFET |
In Stock: 950 $0.19000 |
|
2SJ633-ERochester Electronics |
4A, 60V, P-CHANNEL MOSFET |
In Stock: 0 $0.24000 |
 |
IRF7317PBFRochester Electronics |
IRF7317 - SMALL SIGNAL MOSFET |
In Stock: 895 $0.25000 |
