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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs: | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.16nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 50V, 7pF @ 50V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 9-VFBGA |
| Supplier Device Package: | 9-BGA (1.35x1.35) |
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