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TSM110NB04LDCR RLG

TSM110NB04LDCR RLG

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Manufacturer Part
TSM110NB04LDCR RLG
Manufacturer
TSC (Taiwan Semiconductor)
Description
DUAL N-CHANNEL POWER MOSFET 40V,
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Arrays
Series
-
InStock
2500
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1269pF @ 20V
Power - Max:2W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-PDFN (5x6)

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