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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 23A |
| Rds On (Max) @ Id, Vgs: | 6.3mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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|---|---|---|---|
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TC1550TG-GRoving Networks / Microchip Technology |
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MOSFET 4N-CH 10.6V 14SOIC |
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EPC2102EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
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FS45MR12W1M1B11BOMA1IR (Infineon Technologies) |
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EASY PACK |
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SSM6N7002CFU,LFToshiba Electronic Devices and Storage Corporation |
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In Stock: 2,115,140,000 $0.42000 |
