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GT30J341,Q

GT30J341,Q

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Manufacturer Part
GT30J341,Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
IGBT TRANS 600V 30A TO3PN
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
InStock
7724
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):59 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
Power - Max:230 W
Switching Energy:800µJ (on), 600µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:80ns/280ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):50 ns
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)

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