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| Type | Description |
|---|---|
| Series: | BIMOSFET™ |
| Package: | Bulk |
| Part Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 1700 V |
| Current - Collector (Ic) (Max): | 16 A |
| Current - Collector Pulsed (Icm): | 40 A |
| Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 10A |
| Power - Max: | 150 W |
| Switching Energy: | 1.2mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 65 nC |
| Td (on/off) @ 25°C: | 15ns/160ns |
| Test Condition: | 1360V, 10A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 360 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXBH) |
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|---|---|---|---|
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TRENCH GATE FIELD-STOP IGBT, H S |
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IGBT 600V 15A 56W DPAK |
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STGB10NC60HDT4STMicroelectronics |
IGBT 600V 20A 65W D2PAK |
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STGB10NC60KDT4STMicroelectronics |
IGBT 600V 20A 65W D2PAK |
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IGBT 600V 20A TO252-3 |
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TRENCH GATE FIELD-STOP IGBT, H S |
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IKB10N60TATMA1IR (Infineon Technologies) |
IGBT 600V 20A 110W TO263-3 |
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STGB19NC60HDT4STMicroelectronics |
IGBT 600V 40A 130W D2PAK |
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