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| Type | Description |
|---|---|
| Series: | BIMOSFET™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 3000 V |
| Current - Collector (Ic) (Max): | 80 A |
| Current - Collector Pulsed (Icm): | 280 A |
| Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 32A |
| Power - Max: | 400 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 142 nC |
| Td (on/off) @ 25°C: | - |
| Test Condition: | - |
| Reverse Recovery Time (trr): | 1.5 µs |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXBH) |
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|---|---|---|---|
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STGD4M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT, M S |
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STGP6NC60HDSTMicroelectronics |
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40A 650V TRENCHSTOP5 FAST H5 IGB |
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