RN1901,LF(CT

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Manufacturer Part: RN1901,LF(CT

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2NPN PREBIAS 0.2W US6

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Series: -

InStock: 8054

Datasheets Online: -

RN1901,LF(CT Notice

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Product Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7kOhms
Resistor - Emitter Base (R2):	1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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