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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7kOhms |
| Resistor - Emitter Base (R2): | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 250MHz |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | EMT6 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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NSVMUN5333DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 1NPN 1PNP 50V SC88 |
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EMD62T2RROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.15W EMT6 |
In Stock: 4,030 $0.41000 |
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RN1710JE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
NPN X 2 BRT, Q1BSR=4.7KΩ, Q1BER= |
In Stock: 3,968 $0.41000 |
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RN1708JE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4 |
In Stock: 3,900 $0.41000 |
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RN1709JE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2 |
In Stock: 3,873 $0.41000 |
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RN1707JE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4 |
In Stock: 3,865 $0.41000 |
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SMUN5311DW1T3GSanyo Semiconductor/ON Semiconductor |
TRANS NPN/PNP PREBIAS SOT363 |
In Stock: 3,729 $0.41000 |
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EMG6T2RROHM Semiconductor |
TRANS 2NPN PREBIAS 0.15W EMT5 |
In Stock: 3,691 $0.41000 |
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EMH61T2RROHM Semiconductor |
TRANS 2NPN PREBIAS 0.15W EMT6 |
In Stock: 3,334 $0.41000 |
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UMH2NTNROHM Semiconductor |
TRANS 2NPN PREBIAS 0.15W UMT6 |
In Stock: 3,183 $0.41000 |
