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HN1B01FU-GR,LF

HN1B01FU-GR,LF

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Manufacturer Part
HN1B01FU-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS NPN/PNP 50V 0.15A US6-PLN
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Arrays
Series
-
InStock
5603
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:200mW, 210mW
Frequency - Transition:150MHz
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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